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SIZ910DT-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-PowerWDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 30V 40A / 40A Dual N-Ch MOSFET
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2015
Series TrenchFET?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 100W
Base Part Number SIZ910
Pin Count 8
JESD-30 Code R-PDSO-N6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
Power - Max 48W 100W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 35ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 40A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 100A
Avalanche Energy Rating (Eas) 31 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 750μm
Length 6mm
Width 5mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

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