Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Voltage - Rated DC -12V
Max Power Dissipation 2W
Terminal Form GULL WING
Current Rating -9.2A
Base Part Number IRF7329PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 10 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17m Ω @ 9.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3450pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 57nC @ 4.5V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 260 ns
Turn-Off Delay Time 340 ns
Continuous Drain Current (ID) 9.2A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.017Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate