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SSM6N67NU,LF

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package 6-WDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Trans MOSFET Array N-CH 30V 4A 6-Pin UDFN
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Inventory: 5510
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.42504
≥1 USD $0.42504
≥10 USD $0.329868
≥100 USD $0.198013
≥500 USD $0.183358
≥1000 USD $0.124694

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature 150°C
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reference Standard AEC-Q101
JESD-30 Code S-PDSO-N6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 2W Ta
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 39.1m Ω @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4A Ta
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.0391Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate, 1.8V Drive

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