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RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description N-CHANNEL POWER MOSFET
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Inventory: 36064
Minimum: 1
Total Price: USD $0.14
Unit Price: USD $0.13965
≥1 USD $0.13965
≥10 USD $0.114713
≥100 USD $0.11172
≥500 USD $0.10773
≥1000 USD $0.10374

Technical Details

Technical

Pulsed Drain Current-Max (IDM) 20A
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Terminal Finish MATTE TIN
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-G8
Qualification Status COMMERCIAL
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Power - Max 900mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 30m Ω @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5.5A
Gate Charge (Qg) (Max) @ Vgs 28nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 5.5A
Drain-source On Resistance-Max 0.03Ohm

Physical

Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
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