Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 1999
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Max Power Dissipation 357W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 14
Number of Elements 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 357W
Case Connection ISOLATED
Turn On Delay Time 10 ns
FET Type 4 N-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 540m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 154nC @ 10V
Rise Time 12ns
Drain to Source Voltage (Vdss) 1000V 1kV
Fall Time (Typ) 35 ns
Turn-Off Delay Time 121 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 30V
Pulsed Drain Current-Max (IDM) 72A
DS Breakdown Voltage-Min 1000V
Avalanche Energy Rating (Eas) 2500 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard