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SIA913ADJ-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SC-70-6 Dual
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 12V 4.5A 6.5W 61mohm @ 4.5V
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Inventory: 17349
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.5544
≥1 USD $0.5544
≥10 USD $0.47124
≥100 USD $0.327558
≥500 USD $0.255763
≥1000 USD $0.207881

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SC-70-6 Dual
Weight 28.009329mg
Transistor Element Material SILICON

Dimensions

Height 750μm
Length 2.05mm
Width 2.05mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 6.5W
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SIA913
Pin Count 3
JESD-30 Code S-XDSO-N6
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 20 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 61m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 6V
Current - Continuous Drain (Id) @ 25°C 4.5A
Gate Charge (Qg) (Max) @ Vgs 20nC @ 8V
Rise Time 25 ns
Drain to Source Voltage (Vdss) 12V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 4.3A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4.5A
Drain-source On Resistance-Max 0.061Ohm
Drain to Source Breakdown Voltage -12V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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