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SI5908DC-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Dual N-Channel 20-V (D-S) Mosfet Rohs Compliant: No
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Inventory: 8403
Minimum: 1
Total Price: USD $1.23
Unit Price: USD $1.22892
≥1 USD $1.22892
≥10 USD $1.008084
≥100 USD $0.783922
≥500 USD $0.664467
≥1000 USD $0.541279

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Powers
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number SI5908
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
Case Connection DRAIN
Turn On Delay Time 20 ns
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 40m Ω @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 4.4A
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V
Rise Time 36 ns
Fall Time (Typ) 36 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 5.9A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 4.4A
Drain-source On Resistance-Max 0.04Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Dimensions

Height 1.1mm
Length 3.05mm
Width 1.65mm

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON

Alternative Model

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