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NDD02N40-1G

ON Semiconductor
RoHS
/
Package TO-251-3 Short Leads, IPak, TO-251AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NFET DPAK 400V 1.7A 5.5OH
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Inventory: 141
Minimum: 1
Total Price: USD $5.81
Unit Price: USD $5.806448
≥1 USD $5.806448
≥10 USD $4.765058
≥100 USD $4.615433
≥500 USD $4.466805
≥1000 USD $4.318178

Technical Details

Supply Chain

Factory Lead Time 18 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 19 hours ago)

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 4
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 39W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 39W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5 Ω @ 220mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 121pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 5.5nC @ 10V
Rise Time 7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 1.7A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0055Ohm
Drain to Source Breakdown Voltage 400V
Pulsed Drain Current-Max (IDM) 6.9A

Physical

Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Number of Pins 4
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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