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SI1035X-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 20V 200/150mA 5.0/8.0ohm @ 4.5V
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Inventory: 5527
Minimum: 1
Total Price: USD $0.41
Unit Price: USD $0.40656
≥1 USD $0.40656
≥10 USD $0.349272
≥100 USD $0.242642
≥500 USD $0.189457
≥1000 USD $0.153985

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Weight 32.006612mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 8Ohm
Terminal Finish Matte Tin (Sn)
Additional Feature LOW THRESHOLD
Subcategory Other Transistors
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI1035
Pin Count 6
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5 Ω @ 200mA, 4.5V
Vgs(th) (Max) @ Id 400mV @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C 180mA 145mA
Gate Charge (Qg) (Max) @ Vgs 0.75nC @ 4.5V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 180mA
Gate to Source Voltage (Vgs) 5V
Drain Current-Max (Abs) (ID) 0.18A
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 600μm
Length 1.7mm
Width 1.2mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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