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ZXMHC6A07T8TA

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package 8-SMD, Gull Wing
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET 2N/2P-CH 60V SM8
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Inventory: 4906
Minimum: 1
Total Price: USD $1.59
Unit Price: USD $1.58928
≥1 USD $1.58928
≥10 USD $1.320396
≥100 USD $1.050958
≥500 USD $0.889258

Technical Details

Supply Chain

Factory Lead Time 17 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 425mOhm
Terminal Finish Matte Tin (Sn)
Voltage - Rated DC 60V
Max Power Dissipation 1.7W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Current Rating 1.8A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number ZXMHC6A07T8
Pin Count 8
Number of Elements 4
Number of Channels 4
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Output Current 2.2A
Turn On Delay Time 1.6 ns
Power - Max 1.3W
FET Type 2 N and 2 P-Channel (H-Bridge)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 1.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 166pF @ 40V
Current - Continuous Drain (Id) @ 25°C 1.6A 1.3A
Gate Charge (Qg) (Max) @ Vgs 3.2nC @ 10V
Rise Time 2.3 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 5.8 ns
Turn-Off Delay Time 13 ns
Continuous Drain Current (ID) 1.8A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Dimensions

Height 1.6mm
Length 6.7mm
Width 3.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Gull Wing
Number of Pins 8
Transistor Element Material SILICON

Alternative Model

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