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FDC6305N

ON Semiconductor
RoHS
RoHS RoHS compliant
Package SOT-23-6 Thin, TSOT-23-6
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description ON SEMICONDUCTOR - FDC6305N - DUAL N CHANNEL MOSFET, 20V, SUPER SOT-6
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Inventory: 13863
Minimum: 1
Total Price: USD $0.58
Unit Price: USD $0.58212
≥1 USD $0.58212
≥10 USD $0.495264
≥100 USD $0.344282
≥500 USD $0.268828
≥1000 USD $0.218507

Technical Details

Supply Chain

Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Weight 36mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1999
Series PowerTrench?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 80mOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 960mW
Terminal Form GULL WING
Current Rating 2.7A
Number of Elements 2
Number of Channels 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 900mW
Turn On Delay Time 5 ns
Power - Max 700mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Rise Time 8.5 ns
Fall Time (Typ) 8.5 ns
Turn-Off Delay Time 11 ns
Continuous Drain Current (ID) 2.7A
Threshold Voltage 900mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Max Junction Temperature (Tj) 150°C
FET Feature Standard

Dimensions

Height 1.1mm
Length 3mm
Width 1.7mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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