Operating Temperature -40°C~150°C TJ
Packaging Tray
Published 2008
Series CoolSiC?+
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 21
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X21
Number of Elements 2
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 20mW
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 23m Ω @ 50A, 15V
Vgs(th) (Max) @ Id 5.5V @ 20mA
Input Capacitance (Ciss) (Max) @ Vds 3950pF @ 800V
Current - Continuous Drain (Id) @ 25°C 50A
Gate Charge (Qg) (Max) @ Vgs 125nC @ 5V
Drain to Source Voltage (Vdss) 1200V 1.2kV
Drain Current-Max (Abs) (ID) 55A
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 1200V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)