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SI5513CDC-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V 4A 1206-8
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Inventory: 6024
Minimum: 1
Total Price: USD $0.55
Unit Price: USD $0.5544
≥1 USD $0.5544
≥10 USD $0.47124
≥100 USD $0.327558
≥500 USD $0.255763
≥1000 USD $0.207881

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Weight 84.99187mg
Transistor Element Material SILICON

Dimensions

Height 1.1mm
Length 3.05mm
Width 1.65mm

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2015
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 3.1W
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number SI5513
Pin Count 8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.7W
Turn On Delay Time 19 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 55m Ω @ 4.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 285pF @ 10V
Current - Continuous Drain (Id) @ 25°C 4A 3.7A
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 5V
Rise Time 40 ns
Drain to Source Voltage (Vdss) 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 40 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 3.7A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.055Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
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