CSD18532Q5BT

RoHS

RoHS compliant

Package 8-PowerTDFN

Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single

Description This 2.5 m, 60 V SON 5 mm6 mm NexFET power MOSFET is designed to minimize losses in power conversion applications.

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Inventory: 3260

Minimum: 1

Total Price: USD $2.62

Unit Price: USD $2.62416

≥1 USD $2.62416

≥10 USD $2.181564

≥100 USD $1.736104

Technical Details

Supply Chain

Factory Lead Time 6 Weeks

Lifecycle Status ACTIVE (Last Updated: 5 days ago)

Physical

Contact Plating Tin

Mount Surface Mount

Mounting Type Surface Mount

Package / Case 8-PowerTDFN

Number of Pins 8

Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Lead Free Contains Lead

Technical

Operating Temperature -55°C~150°C TJ

Packaging Tape & Reel (TR)

Series NexFET?

JESD-609 Code e3

Pbfree Code yes

Part Status Active

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Number of Terminations 5

ECCN Code EAR99

Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Technology MOSFET (Metal Oxide)

Terminal Position DUAL

Terminal Form NO LEAD

Peak Reflow Temperature (Cel) 260

Reach Compliance Code not_compliant

Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

Base Part Number CSD18532

Number of Elements 1

Power Dissipation-Max 3.2W Ta 156W Tc

Element Configuration Single

Operating Mode ENHANCEMENT MODE

Case Connection DRAIN

Turn On Delay Time 5.8 ns

FET Type N-Channel

Transistor Application SWITCHING

Rds On (Max) @ Id, Vgs 3.2m Ω @ 25A, 10V

Vgs(th) (Max) @ Id 2.2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds 5070pF @ 30V

Current - Continuous Drain (Id) @ 25°C 100A Ta

Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V

Rise Time 7.2 ns

Drain to Source Voltage (Vdss) 60V

Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V

Vgs (Max) ±20V

Fall Time (Typ) 3.1 ns

Turn-Off Delay Time 22 ns

Continuous Drain Current (ID) 100A

Gate to Source Voltage (Vgs) 20V

Drain Current-Max (Abs) (ID) 23A

Drain-source On Resistance-Max 0.0043Ohm

Pulsed Drain Current-Max (IDM) 400A

DS Breakdown Voltage-Min 60V

Avalanche Energy Rating (Eas) 320 mJ

Feedback Cap-Max (Crss) 17 pF

Dimensions

Length 5mm

Width 6mm

Thickness 950μm

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