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EPC2016C

EPC
RoHS
RoHS RoHS compliant
Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description GANFET TRANS 100V 18A BUMPED DIE
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Inventory: 101759
Minimum: 1
Total Price: USD $2.39
Unit Price: USD $2.39316
≥1 USD $2.39316
≥10 USD $1.989372
≥100 USD $1.583274
≥500 USD $1.339671
≥1000 USD $1.136686

Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die

Dimensions

Height 815μm

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series eGaN?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
Number of Channels 1
FET Type N-Channel
Rds On (Max) @ Id, Vgs 16mOhm @ 11A, 5V
Vgs(th) (Max) @ Id 2.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 50V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 5V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 100V
Input Capacitance 420pF
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 12mOhm
Rds On Max 16 mΩ

Alternative Model

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