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SI7820DN-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? 1212-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 200V 1.7A 1212-8
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Inventory: 11858
Minimum: 1
Total Price: USD $0.84
Unit Price: USD $0.836883
≥1 USD $0.836883
≥10 USD $0.812268
≥100 USD $0.787654
≥500 USD $0.756886

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? 1212-8
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
JESD-30 Code S-XDSO-C5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 240m Ω @ 2.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 1.7A Ta
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 2.6A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.24Ohm
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 0.6 mJ

Dimensions

Height 1.04mm
Length 3.05mm
Width 3.05mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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