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SI4425BDY-T1-E3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Transistor Mosfet P-ch 30V 8.8A 8-PIN SOIC N T/r
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Inventory: 5273
Minimum: 1
Total Price: USD $0.11
Unit Price: USD $0.112709
≥1 USD $0.112709
≥10 USD $0.109394
≥100 USD $0.106079
≥500 USD $0.101935

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 12mOhm
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 1.5W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.5W
Turn On Delay Time 15 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 11.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Current - Continuous Drain (Id) @ 25°C 8.8A Ta
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 13 ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 100 ns
Continuous Drain Current (ID) -11.4A
Threshold Voltage -400mV
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Nominal Vgs -400 mV

Dimensions

Height 1.55mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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