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IXTQ3N150M

IXYS
RoHS
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Package TO-3P-3 Full Pack
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description DISCMOSFET N-CH STD-HIVOLTAGE TO
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack

Technical

Operating Temperature -55°C~150°C TJ
Part Status Active
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 73W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.3 Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1375pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.83A Tc
Gate Charge (Qg) (Max) @ Vgs 38.6nC @ 10V
Drain to Source Voltage (Vdss) 1500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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