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IRFH5210TRPBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description INFINEON IRFH5210TRPBF MOSFET Transistor, N Channel, 55 A, 100 V, 0.0126 ohm, 10 V, 4 VNew
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Inventory: 7819
Minimum: 1
Total Price: USD $0.82
Unit Price: USD $0.81864
≥1 USD $0.81864
≥10 USD $0.740348
≥100 USD $0.696394
≥500 USD $0.646946
≥1000 USD $0.581014

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-N5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.6W Ta 104W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 7.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.9m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 2570pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Ta 55A Tc
Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
Rise Time 9.7 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.5 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 100A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 55A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 220A

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 838.2μm
Length 5.9944mm
Width 5mm

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON
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