Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD18504
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.1W Ta 77W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.1W
Case Connection DRAIN
Turn On Delay Time 3.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.6m Ω @ 17A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1656pF @ 20V
Current - Continuous Drain (Id) @ 25°C 15A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 6.8ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 15A
Threshold Voltage 1.9V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 40V
Pulsed Drain Current-Max (IDM) 275A
Avalanche Energy Rating (Eas) 92 mJ
Max Junction Temperature (Tj) 150°C
Feedback Cap-Max (Crss) 9.6 pF