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IXTD1R4N60P 11

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RoHS
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Package Die
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PolarHV?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9 Ω @ 700mA, 10V
Vgs(th) (Max) @ Id 5.5V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V

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