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BSZ123N08NS3GATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerVDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 80V 10A 8-Pin TSDSON EP
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Inventory: 4333
Minimum: 1
Total Price: USD $1.01
Unit Price: USD $1.009565
≥1 USD $1.009565
≥10 USD $0.848859
≥100 USD $0.760951
≥500 USD $0.660681
≥1000 USD $0.616727

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code S-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 66W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 66W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12.3m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 33μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 40V
Current - Continuous Drain (Id) @ 25°C 10A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Rise Time 18 ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 19 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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