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BSS806NEH6327XTSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-Ch 20V 2.3A SOT-23-3
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Inventory: 8500
Minimum: 1
Total Price: USD $0.28
Unit Price: USD $0.282293
≥1 USD $0.282293
≥10 USD $0.23142
≥100 USD $0.224438
≥500 USD $0.217455
≥1000 USD $0.210473

Technical Details

Supply Chain

Factory Lead Time 10 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series Automotive, AEC-Q101, HEXFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 500mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 500mW
Turn On Delay Time 7.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 57m Ω @ 2.3A, 2.5V
Vgs(th) (Max) @ Id 0.75V @ 11μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 529pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.3A Ta
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 2.5V
Rise Time 9.9 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 2.5V
Vgs (Max) ±8V
Fall Time (Typ) 3.7 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 2.3A
Gate to Source Voltage (Vgs) 8V
Max Dual Supply Voltage 20V
Drain-source On Resistance-Max 0.057Ohm
Feedback Cap-Max (Crss) 29 pF

Dimensions

Height 1mm
Length 2.9mm
Width 1.3mm

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

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