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SI2308CDS-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 2.6A SOT23-3
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Inventory: 16977
Minimum: 1
Total Price: USD $0.01
Unit Price: USD $0.011981
≥1 USD $0.011981
≥10 USD $0.011628
≥100 USD $0.011276
≥500 USD $0.010836

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series TrenchFET? Gen IV
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 10
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 1.6W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 144m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 105pF @ 30V
Current - Continuous Drain (Id) @ 25°C 2.6A Tc
Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 2.6A
Drain-source On Resistance-Max 0.144Ohm
DS Breakdown Voltage-Min 60V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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