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IXTA24P085T

IXYS
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 85V 24A TO-263
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Inventory: 3878
Minimum: 1
Total Price: USD $2.5
Unit Price: USD $2.50404
≥1 USD $2.50404
≥10 USD $1.984198
≥100 USD $1.700622
≥500 USD $1.511701
≥1000 USD $1.294395
≥3000 USD $1.218812

Technical Details

Supply Chain

Factory Lead Time 28 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2010
Series TrenchP?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish PURE TIN
Additional Feature AVALANCHE RATED
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 4
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 65m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2090pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Drain to Source Voltage (Vdss) 85V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±15V
Continuous Drain Current (ID) 24A
Drain-source On Resistance-Max 0.065Ohm
Pulsed Drain Current-Max (IDM) 80A
DS Breakdown Voltage-Min 85V
Avalanche Energy Rating (Eas) 200 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON

Alternative Model

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