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SQM200N04-1M7L_GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-263-7, D2Pak (6 Leads + Tab)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Automotive N-Channel 40 V (D-S) 175 °C MOSFET
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Inventory: 5971
Minimum: 1
Total Price: USD $2.72
Unit Price: USD $2.72418
≥1 USD $2.72418
≥10 USD $2.569986
≥100 USD $2.424513
≥500 USD $2.287273
≥1000 USD $2.157804

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-7, D2Pak (6 Leads + Tab)
Number of Pins 7
Weight 1.59999g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2016
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G6
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 22 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.7m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11168pF @ 20V
Current - Continuous Drain (Id) @ 25°C 200A Tc
Gate Charge (Qg) (Max) @ Vgs 291nC @ 10V
Rise Time 17ns
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 200A
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 600A
DS Breakdown Voltage-Min 40V

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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