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CSD18502Q5BT

Texas Instruments
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 40-V, N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150
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Inventory: 1427
Minimum: 1
Total Price: USD $2.48
Unit Price: USD $2.47632
≥1 USD $2.47632
≥10 USD $2.082696
≥100 USD $1.684914

Technical Details

Supply Chain

Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number CSD18502
Number of Elements 1
Power Dissipation-Max 3.2W Ta 156W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5070pF @ 20V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 26A
Drain-source On Resistance-Max 0.0033Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Feedback Cap-Max (Crss) 27 pF

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Dimensions

Length 5mm
Width 6mm
Thickness 950μm

Alternative Model

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