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IPN60R1K0CEATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package SOT-223-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description INFINEON IPN60R1K0CEATMA1 Power MOSFET, N Channel, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 VNew
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Inventory: 15078
Minimum: 1
Total Price: USD $0.17
Unit Price: USD $0.165112
≥1 USD $0.165112
≥10 USD $0.160256
≥100 USD $0.1554
≥500 USD $0.149329

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case SOT-223-3
Number of Pins 3
Supplier Device Package PG-SOT223

Technical

Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series CoolMOS? CE
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 5W Tc
Power Dissipation 5W
Turn On Delay Time 10 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130μA
Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V
Current - Continuous Drain (Id) @ 25°C 6.8A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 6.8A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 900mOhm

Dimensions

Height 1.8mm

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant

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