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BSC079N03LSCGATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-KANAL POWER MOS
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Inventory: 6077
Minimum: 1
Total Price: USD $20.82
Unit Price: USD $20.824808
≥1 USD $20.824808
≥10 USD $17.087175
≥100 USD $16.553513
≥500 USD $16.01985
≥1000 USD $15.48519

Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2004
Series OptiMOS?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 30W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 7.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C 14A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 2.4ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14 ns
Continuous Drain Current (ID) 14A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 200A
DS Breakdown Voltage-Min 30V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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