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BSZ088N03LSGATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 30V 12A 8-Pin TSDSON
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Inventory: 36054
Minimum: 1
Total Price: USD $5.07
Unit Price: USD $5.074283
≥1 USD $5.074283
≥10 USD $4.163565
≥100 USD $4.03389
≥500 USD $3.903218
≥1000 USD $3.773543

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS?
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-N5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.1W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.1W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.8m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V
Rise Time 2.8 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 12A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 40A
Avalanche Energy Rating (Eas) 25 mJ

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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