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SIRA14DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description VISHAY SIRA14DP-T1-GE3 MOSFET Transistor, N Channel, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V
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Inventory: 432
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.133756
≥1 USD $0.133756
≥10 USD $0.129822
≥100 USD $0.125888
≥500 USD $0.120971

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8
Weight 506.605978mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Digi-Reel?
Published 2011
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.6W Ta 31.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.6W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.1m Ω @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 15V
Current - Continuous Drain (Id) @ 25°C 58A Tc
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) +20V, -16V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 18 ns
Continuous Drain Current (ID) 20A
Threshold Voltage 1.1V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V

Dimensions

Height 1.0668mm
Length 5.969mm
Width 5.0038mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

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