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Transistors - Bipolar (BJT) - Single, Pre-Biased
FJNS3205RBU

FJNS3205RBU

ON Semiconductor

RoHS

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Package TO-226-3, TO-92-3 Short Body

Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased

Description TRANS PREBIAS NPN 300MW TO92S

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Inventory: 2973

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Technical Details

Physical

Mounting Type Through Hole

Package / Case TO-226-3, TO-92-3 Short Body

Supplier Device Package TO-92S

Technical

Packaging Bulk

Part Status Obsolete

Moisture Sensitivity Level (MSL) 1 (Unlimited)

Power - Max 300mW

Transistor Type NPN - Pre-Biased

DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V

Current - Collector Cutoff (Max) 100nA ICBO

Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA

Voltage - Collector Emitter Breakdown (Max) 50V

Current - Collector (Ic) (Max) 100mA

Frequency - Transition 250MHz

Resistor - Base (R1) 4.7 kOhms

Resistor - Emitter Base (R2) 10 kOhms

Alternative Model

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WeEn Semiconductors

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