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SI4491EDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 17.3A 8-SO
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Inventory: 5525
Minimum: 1
Total Price: USD $0.44
Unit Price: USD $0.435137
≥1 USD $0.435137
≥10 USD $0.422339
≥100 USD $0.409541
≥500 USD $0.393543

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3.1W Ta 6.9W Tc
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.5m Ω @ 13A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4620pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17.3A Ta
Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±25V
Continuous Drain Current (ID) 17.3A
JEDEC-95 Code MS-012AA
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.0065Ohm
DS Breakdown Voltage-Min 30V

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Transistor Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Alternative Model

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