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SIR664DP-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package PowerPAK? SO-8
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 60V 60A PPAK SO-8
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Inventory: 1554
Minimum: 1
Total Price: USD $0.38
Unit Price: USD $0.377717
≥1 USD $0.377717
≥10 USD $0.366608
≥100 USD $0.355499
≥500 USD $0.341612

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerPAK? SO-8
Number of Pins 8

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Packaging Cut Tape (CT)
Published 2013
Series TrenchFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 5W
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form C BEND
JESD-30 Code R-PDSO-C5
Number of Elements 1
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 5W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1750pF @ 30V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 12ns
Fall Time (Typ) 7 ns
Turn-Off Delay Time 24 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.006Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 20 mJ

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