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SI4866BDY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 12V 21.5A 8-SOIC
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Inventory: 4068
Minimum: 1
Total Price: USD $2.9
Unit Price: USD $2.903723
≥1 USD $2.903723
≥10 USD $2.383028
≥100 USD $2.308215
≥500 USD $2.233403
≥1000 USD $2.159588

Technical Details

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 186.993455mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2014
Series TrenchFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Resistance 5.3mOhm
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 4.45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5020pF @ 6V
Current - Continuous Drain (Id) @ 25°C 21.5A Tc
Gate Charge (Qg) (Max) @ Vgs 80nC @ 4.5V
Rise Time 12 ns
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 9 ns
Turn-Off Delay Time 57 ns
Continuous Drain Current (ID) 16.1A
Threshold Voltage 1V
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage 12V
Max Junction Temperature (Tj) 150°C

Dimensions

Height 1.75mm
Length 5mm
Width 4mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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