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SI4186DY-T1-GE3

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 20V 35.8A 8SOIC
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Inventory: 990
Minimum: 1
Total Price: USD $0.37
Unit Price: USD $0.372453
≥1 USD $0.372453
≥10 USD $0.361499
≥100 USD $0.350544
≥500 USD $0.336851

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Weight 540.001716mg
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series TrenchFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish PURE MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 8
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3W Ta 6W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3W
Turn On Delay Time 29 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3630pF @ 10V
Current - Continuous Drain (Id) @ 25°C 35.8A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 16 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 13 ns
Turn-Off Delay Time 40 ns
Continuous Drain Current (ID) 35.8A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 25.3A
Drain-source On Resistance-Max 0.0026Ohm
Drain to Source Breakdown Voltage 20V
Nominal Vgs 2.4 V

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

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