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FQB50N06TM

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 60V N-Channel QFET
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Inventory: 1147
Minimum: 1
Total Price: USD $5.23
Unit Price: USD $5.227949
≥1 USD $5.227949
≥10 USD $5.074186
≥100 USD $4.920422
≥500 USD $4.728218

Technical Details

Supply Chain

Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 50A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.75W Ta 120W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.75W
Case Connection DRAIN
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 22m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1540pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Rise Time 105 ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.022Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 490 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 4.83mm
Length 10.67mm
Width 9.65mm

Alternative Model

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