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BUK9606-55B,118

Nexperia USA Inc.
RoHS
RoHS RoHS compliant
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 55V 75A D2PAK
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Inventory: 8012
Minimum: 1
Total Price: USD $0.63
Unit Price: USD $0.62832
≥1 USD $0.62832

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Contact Plating Tin
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON

Technical

Operating Temperature -55┬?C~175┬?C TJ
Packaging Tape & Reel (TR)
Published 2009
Series Automotive, AEC-Q101, TrenchMOSō?ó
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 245
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 3
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 258W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 258W
Case Connection DRAIN
Turn On Delay Time 37 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.4m ╬? @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 7565pF @ 25V
Current - Continuous Drain (Id) @ 25┬?C 75A Tc
Gate Charge (Qg) (Max) @ Vgs 60nC @ 5V
Rise Time 95ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ┬?15V
Fall Time (Typ) 106 ns
Turn-Off Delay Time 117 ns
Continuous Drain Current (ID) 146A
Gate to Source Voltage (Vgs) 15V
Max Dual Supply Voltage 55V
Drain Current-Max (Abs) (ID) 75A
Drain-source On Resistance-Max 0.0064Ohm
Drain to Source Breakdown Voltage 55V
Pulsed Drain Current-Max (IDM) 587A
Avalanche Energy Rating (Eas) 679 mJ

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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