Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 9.5MOhm
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 56A
Time@Peak Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 15A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time 11 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.3 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 56A
Threshold Voltage 1.8V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 220A
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 42 mJ
Nominal Vgs 1.8 V