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IPD60N10S4L12ATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 100V 60A 3-Pin TO-252 T/R
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Inventory: 105
Minimum: 1
Total Price: USD $1.24
Unit Price: USD $1.241696
≥1 USD $1.241696
≥10 USD $1.215599
≥100 USD $1.196369
≥500 USD $1.084283
≥1000 USD $1.048373
≥3000 USD $0.939645

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 3.949996g
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101, HEXFET?
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 94W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 4 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 12m Ω @ 60A, 10V
Vgs(th) (Max) @ Id 2.1V @ 46μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3170pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 3 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 21 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 100V
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 240A

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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