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FQP13N06L

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET 60V N-Channel QFET Logic Level
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Inventory: 47163
Minimum: 1
Total Price: USD $0.43
Unit Price: USD $0.42504
≥1 USD $0.42504

Technical Details

Supply Chain

Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2001
Series QFET?
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 110mOhm
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Voltage - Rated DC 60V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 13.6A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13.6A Tc
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 5V
Rise Time 90 ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 13.6A
Threshold Voltage 2.5V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 54.4A
Dual Supply Voltage 60V
Avalanche Energy Rating (Eas) 90 mJ
Nominal Vgs 2.5 V

Dimensions

Height 9.4mm
Length 10.1mm
Width 4.7mm

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON

Alternative Model

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