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RD3P08BBDTL

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description RD3P08BBD IS A POWER MOSFET WITH
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Inventory: 9500
Minimum: 1
Total Price: USD $1.03
Unit Price: USD $1.030982
≥1 USD $1.030982
≥10 USD $1.000659
≥100 USD $0.970336
≥500 USD $0.932432

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 119W Ta
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.6m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1940pF @ 50V
Current - Continuous Drain (Id) @ 25°C 80A Ta
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 80A
Drain-source On Resistance-Max 0.0116Ohm
Pulsed Drain Current-Max (IDM) 160A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 29 mJ

Alternative Model

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