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IRF5305PBF

Infineon Technologies
RoHS
RoHS RoHS compliant
Package TO-220-3
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET P-CH 55V 31A TO-220AB
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Inventory: 119022
Minimum: 1
Total Price: USD $0.44
Unit Price: USD $0.436905
≥1 USD $0.436905
≥10 USD $0.3591
≥100 USD $0.348128
≥500 USD $0.336158
≥1000 USD $0.325185

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

Dimensions

Height 19.3mm
Length 10.5156mm
Width 4.69mm

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series HEXFET?
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination Through Hole
Resistance 60mOhm
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Voltage - Rated DC -55V
Technology MOSFET (Metal Oxide)
Current Rating -31A
Lead Pitch 2.54mm
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 110W Tc
Element Configuration Single
Power Dissipation 110W
Turn On Delay Time 14 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 60mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C 31A Tc
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Rise Time 66ns
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 63 ns
Turn-Off Delay Time 39 ns
Continuous Drain Current (ID) -31A
Threshold Voltage -4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -55V
Dual Supply Voltage -55V
Input Capacitance 1.2nF
Recovery Time 110 ns
Max Junction Temperature (Tj) 175°C
Drain to Source Resistance 60mOhm
Rds On Max 60 mΩ
Nominal Vgs -4 V

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