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R6009JND3TL1

ROHM Semiconductor
RoHS
RoHS RoHS compliant
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description R6009JND3 IS A POWER MOSFET WITH
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Inventory: 2585
Minimum: 1
Total Price: USD $1.62
Unit Price: USD $1.617
≥1 USD $1.617
≥10 USD $1.341648
≥100 USD $1.068236
≥500 USD $0.964434

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 125W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 585m Ω @ 4.5A, 15V
Vgs(th) (Max) @ Id 7V @ 1.38mA
Input Capacitance (Ciss) (Max) @ Vds 645pF @ 100V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 15V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 15V
Vgs (Max) ±30V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.585Ohm
Pulsed Drain Current-Max (IDM) 27A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 177 mJ

Compliance

RoHS Status ROHS3 Compliant
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