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IRFIBC20GPBF

Vishay Siliconix
RoHS
RoHS RoHS compliant
Package TO-220-3 Full Pack, Isolated Tab
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 600V 1.7A TO220FP
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Inventory: 3517
Minimum: 1
Total Price: USD $1.98
Unit Price: USD $1.98303
≥1 USD $1.98303
≥10 USD $1.626923
≥100 USD $1.57605
≥500 USD $1.525178
≥1000 USD $1.474305

Technical Details

Supply Chain

Factory Lead Time 8 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON

Dimensions

Height 9.8mm
Length 10.63mm
Width 4.83mm

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2014
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 30W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 30W
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.4 Ω @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 23 ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 1.7A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 6.8A
DS Breakdown Voltage-Min 600V
Avalanche Energy Rating (Eas) 84 mJ

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