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STFI10N65K3

STMicroelectronics
RoHS
RoHS RoHS compliant
Package TO-262-3 Full Pack, I2Pak
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 10A I2PAKFP
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Inventory: 1606
Minimum: 1
Total Price: USD $2.67
Unit Price: USD $2.67036
≥1 USD $2.67036
≥10 USD $2.116514
≥100 USD $1.814182
≥500 USD $1.612638
≥1000 USD $1.380826

Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Full Pack, I2Pak
Number of Pins 3

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperMESH3?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Base Part Number STFI10N
Power Dissipation-Max 35W Tc
Element Configuration Single
Power Dissipation 35W
Turn On Delay Time 14.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1 Ω @ 3.6A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 1180pF @ 25V
Current - Continuous Drain (Id) @ 25°C 10A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Rise Time 14ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 44 ns
Continuous Drain Current (ID) 10A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V

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