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IPDD60R080G7XTMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 10-PowerSOP Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET NCH 650V 83A PG-HDSOP-10
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Inventory: 2964
Minimum: 1
Total Price: USD $6.4
Unit Price: USD $6.40332
≥1 USD $6.40332
≥10 USD $5.490408
≥100 USD $4.575463
≥500 USD $4.037196

Technical Details

Supply Chain

Factory Lead Time 18 Weeks

Physical

Mounting Type Surface Mount
Package / Case 10-PowerSOP Module

Dimensions

Height 2.5mm

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series CoolMOS? G7
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Channels 1
Power Dissipation-Max 174W Tc
Power Dissipation 174W
Turn On Delay Time 19 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 80m Ω @ 9.7A, 10V
Vgs(th) (Max) @ Id 4V @ 490μA
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 400V
Current - Continuous Drain (Id) @ 25°C 29A Tc
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Turn-Off Delay Time 61 ns
Continuous Drain Current (ID) 29A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Max Junction Temperature (Tj) 150°C

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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