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FDI045N10A-F102

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description MOSFET N-CH 100V 120A I2PAK-3
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Inventory: 261
Minimum: 1
Total Price: USD $3.92
Unit Price: USD $3.91776
≥1 USD $3.91776
≥10 USD $3.108336
≥100 USD $2.664169
≥500 USD $2.368193
≥1000 USD $2.027764
≥3000 USD $1.909354

Technical Details

Supply Chain

Factory Lead Time 9 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins 3
Weight 2.084g

Compliance

Radiation Hardening No
RoHS Status ROHS3 Compliant

Technical

Operating Temperature -55°C~175°C TJ
Packaging Tube
Series PowerTrench?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 263W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 263W
Turn On Delay Time 23 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5270pF @ 50V
Current - Continuous Drain (Id) @ 25°C 120A Tc
Gate Charge (Qg) (Max) @ Vgs 74nC @ 10V
Rise Time 26ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 15 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
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