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RN2304(TE85L,F)

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package SC-70, SOT-323
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased
Description Trans Digital BJT PNP 50V 100mA 3-Pin USM T/R
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Inventory: 22573
Minimum: 1
Total Price: USD $10.05
Unit Price: USD $10.047818
≥1 USD $10.047818
≥10 USD $8.244338
≥100 USD $7.986983
≥500 USD $7.729628
≥1000 USD $7.472273

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Packaging Tape & Reel (TR)
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 100mW
Base Part Number RN230*
Polarity PNP
Element Configuration Single
Power Dissipation 100mW
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage 50V
Max Breakdown Voltage 50V
Frequency - Transition 200MHz
hFE Min 80
Resistor - Base (R1) 47 k Ω
Continuous Collector Current -100mA
Resistor - Emitter Base (R2) 47 k Ω

Alternative Model

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