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BSC014N04LSATMA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Description Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP
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Inventory: 204097
Minimum: 1
Total Price: USD $0.85
Unit Price: USD $0.84588
≥1 USD $0.84588
≥10 USD $0.69426
≥100 USD $0.672315
≥500 USD $0.651368
≥1000 USD $0.629423

Technical Details

Supply Chain

Factory Lead Time 39 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Technical

Operating Temperature -55┬?C~150┬?C TJ
Packaging Cut Tape (CT)
Published 2012
Series OptiMOSō?ó
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 96W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m ╬? @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250╬╝A
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 20V
Current - Continuous Drain (Id) @ 25┬?C 32A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Rise Time 56 ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ┬?20V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 55 ns
Continuous Drain Current (ID) 32A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0019Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 170 mJ
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